| PART |
Description |
Maker |
| HCMS-2353 HCMS-2351 HCMS-2354 HCMS-2352 HCMS-2311 |
CMOS Extended Temperature Range 5 x 7 Alphanumeric Displays(CMOS 扩展温度范围 5 x 7文字数字显示 扩展温度范围的CMOS 5 × 7字母数字显示器（扩展温度范围的CMOS 5 × 7文字数字显示器）
|
HIROSE ELECTRIC Co., Ltd.
|
| KM416V1204BJ KM416V1004BT-L7 KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
|
Samsung Electronic
Samsung semiconductor
|
| UPD442012AGY-DD12X-MJH UPD442012AGY-BB70X-MJH UPD4 |
2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC[NEC]
|
| UPD43256BGW-A10X-9JL UPD43256BGW-A10X-9KL UPD43256 |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
http://
|
| AT24C02AN-10SE-2.7 AT24C04AN-10SE-2.7 AT24C08A-10P |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Two-wire Serial EEPROM Extended Temperature
|
ATMEL Corporation
Atmel Corp.
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60T |
60ns; 4M x 4 CMOS dynamic RAM with extended data output
40ns; 4K x 4 CMOS dynamic RAM with extended data output
50ns; 4M x 4 CMOS dynamic RAM with extended data output
|
List of Unclassifed Manufacturers
G-LINK Technology
|
| XR-2242 |
Long Rang Timer
|
Exar
|
| XR-2243 |
Micropower Long Rang Timer
|
Exar
|
| FTR-1621T-61 FTR-1621T-51 FTR-1621T-55 FTR-1621T-5 |
CWDM Extended Temperature GBIC Transceiver
|
Finisar Corporation.
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
